C3M0065100K SiC N-Channel MOSFET, 35 A, 1000 V C3M, 4-Pin TO-247 Wolfspeed

  • RS Stock No. 168-4886
  • Mfr. Part No. C3M0065100K
  • Manufacturer Wolfspeed
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery

MOSFET Transistors, Cree Inc.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 35 A
Maximum Drain Source Voltage 1000 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 4
Maximum Drain Source Resistance 90 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Minimum Gate Threshold Voltage 1.8V
Maximum Power Dissipation 113.5 W
Maximum Gate Source Voltage -8 V, +19 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 35 nC @ 15 V, 35 nC @ 4 V
Maximum Operating Temperature +150 °C
Forward Diode Voltage 4.8V
Minimum Operating Temperature -55 °C
Series C3M
Width 5.21mm
Length 16.13mm
Transistor Material SiC
Height 23.6mm
840 In stock for delivery within 3 working days
Price Each (In a Tube of 30)
SGD 18.33
(exc. GST)
SGD 19.61
(inc. GST)
units
Per unit
Per Tube*
30 +
SGD18.33
SGD549.90
*price indicative
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