- RS Stock No.:
- 168-4886
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
1770 In stock for delivery within 4 working days
Added
Price Each (In a Tube of 30)
SGD25.026
(exc. GST)
SGD27.278
(inc. GST)
Units | Per unit | Per Tube* |
30 + | SGD25.026 | SGD750.78 |
*price indicative |
- RS Stock No.:
- 168-4886
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Cree Inc.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 35 A |
Maximum Drain Source Voltage | 1000 V |
Series | C3M |
Package Type | TO-247-4 |
Mounting Type | Through Hole |
Pin Count | 4 |
Maximum Drain Source Resistance | 90 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 1.8V |
Maximum Power Dissipation | 113.5 W |
Maximum Gate Source Voltage | -8 V, +19 V |
Transistor Material | SiC |
Length | 16.13mm |
Typical Gate Charge @ Vgs | 35 nC @ 15 V, 35 nC @ 4 V |
Maximum Operating Temperature | +150 °C |
Width | 5.21mm |
Number of Elements per Chip | 1 |
Forward Diode Voltage | 4.8V |
Minimum Operating Temperature | -55 °C |
Height | 23.6mm |