FDY1002PZ Dual P-Channel MOSFET, 830 mA, 20 V PowerTrench, 6-Pin SOT-523 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type P
Maximum Continuous Drain Current 830 mA
Maximum Drain Source Voltage 20 V
Package Type SOT-523 (SC-89)
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 1.8 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.4V
Maximum Power Dissipation 625 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 2
Series PowerTrench
Maximum Operating Temperature +150 °C
Length 1.7mm
Transistor Material Si
Width 1.2mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 2.2 nC @ 4.5 V
Height 0.6mm
3000 In stock for delivery within 4 working days
Price Each (On a Reel of 3000)
SGD 0.212
(exc. GST)
SGD 0.227
(inc. GST)
units
Per unit
Per Reel*
3000 +
SGD0.212
SGD636.00
*price indicative
Related Products
Infineon’s dual power MOSFETs integrate two HEXFET® devices ...
Description:
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel ...
The Infineon OptiMOS™ P-Channel power MOSFETs are designed ...
Description:
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and ...
The SQ series of MOSFETs from Vishay Semiconductor ...
Description:
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability. • AEC-Q101 qualified• Junction temperature up to +175°C• Low on-resistance n- and p-channel TrenchFET® technologies• Innovative space-saving package options.
Infineon's range of discrete HEXFET® power MOSFETs includes ...
Description:
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, ...