Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3
- RS Stock No.:
- 165-7255
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Manufacturer:
- Vishay
5000 In stock for delivery within 4 working days
Added
Price Each (On a Reel of 2500)
SGD0.501
(exc. GST)
SGD0.546
(inc. GST)
| Units | Per unit | Per Reel* |
| 2500 + | SGD0.501 | SGD1,252.50 |
| *price indicative | ||
- RS Stock No.:
- 165-7255
- Mfr. Part No.:
- SI4599DY-T1-GE3
- Manufacturer:
- Vishay
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual N/P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 4.7 A, 6.8 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 42.5 mΩ, 62 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 3 W, 3.1 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V, 25 nC @ 10 V |
| Length | 5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.55mm |