N-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 Vishay SQ2310ES-T1_BE3

RS Stock No.:: 165-6982
Mfr. Part No.:: SQ2310ES-T1_BE3
Manufacturer:: Vishay

N-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 Vishay SQ2310ES-T1_BE3

This image is representative of the product range

Temporarily out of stock - back order for despatch 19/12/2024, delivery within 4 working days from despatch date

Added

Price Each (On a Reel of 3000)

SGD0.474

(exc. GST)

SGD0.517

(inc. GST)

Units	Per unit	Per Reel*
3000 - 6000	SGD0.474	SGD1,422.00
9000 - 12000	SGD0.456	SGD1,368.00
15000 +	SGD0.428	SGD1,284.00
*price indicative

RS Stock No.:: 165-6982
Mfr. Part No.:: SQ2310ES-T1_BE3
Manufacturer:: Vishay

Technical data sheets

Legislation and Compliance

Product Details

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor

The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs

• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	SOT-23
Series	SQ Rugged
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	54 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	2 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Width	1.4mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	4.5 nC @ 4.5 V
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	3.04mm
Automotive Standard	AEC-Q101
Minimum Operating Temperature	-55 °C
Height	1.02mm