N-Channel MOSFET, 58 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIRA14DP-T1-GE3
- RS Stock No.:
- 165-6980
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Manufacturer:
- Vishay
3000 In stock for delivery within 4 working days
Added
Price Each (On a Reel of 3000)
SGD0.371
(exc. GST)
SGD0.404
(inc. GST)
| Units | Per unit | Per Reel* |
| 3000 - 6000 | SGD0.371 | SGD1,113.00 |
| 9000 - 12000 | SGD0.357 | SGD1,071.00 |
| 15000 + | SGD0.334 | SGD1,002.00 |
| *price indicative | ||
- RS Stock No.:
- 165-6980
- Mfr. Part No.:
- SIRA14DP-T1-GE3
- Manufacturer:
- Vishay
Legislation and Compliance
Product Details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 58 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PowerPAK SO-8 |
| Series | TrenchFET |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 8.5 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 31.2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +20 V |
| Length | 6.25mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 19.4 nC @ 10 V |
| Width | 5.26mm |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Height | 1.12mm |