SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

RS Stock No.:: 162-9710
Mfr. Part No.:: C2M1000170J
Manufacturer:: Wolfspeed

SiC N-Channel MOSFET, 5.3 A, 1700 V, 7-Pin D2PAK Wolfspeed C2M1000170J

This image is representative of the product range

Temporarily out of stock - back order for despatch 06/01/2025, delivery within 4 working days from despatch date

Added

Price Each (In a Tube of 50)

SGD12.093

(exc. GST)

SGD13.181

(inc. GST)

Units	Per unit	Per Tube*
50 +	SGD12.093	SGD604.65
*price indicative

RS Stock No.:: 162-9710
Mfr. Part No.:: C2M1000170J
Manufacturer:: Wolfspeed

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Wolfspeed

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	1700 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	7
Maximum Drain Source Resistance	1.4 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	78 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-10 V, +25 V
Typical Gate Charge @ Vgs	13 nC @ 20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	10.99mm
Length	10.23mm
Transistor Material	SiC
Forward Diode Voltage	3.8V
Minimum Operating Temperature	-55 °C
Height	4.57mm