IRLML2502TRPBF N-Channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23 Infineon

  • RS Stock No. 162-3304
  • Mfr. Part No. IRLML2502TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
Non Compliant
Product Details

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 4.2 A
Maximum Drain Source Voltage 20 V
Maximum Drain Source Resistance 80 mΩ
Maximum Gate Threshold Voltage 1.2V
Minimum Gate Threshold Voltage 0.6V
Maximum Gate Source Voltage ±12 V
Package Type SOT-23
Mounting Type Surface Mount
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 1.25 W
Width 1.4mm
Number of Elements per Chip 1
Forward Diode Voltage 1.2V
Length 3.04mm
Minimum Operating Temperature -55 °C
Height 1.02mm
Series IRLML2502
Maximum Operating Temperature +150 °C
Typical Gate Charge @ Vgs 8 nC @ 5 V
3940 In stock for delivery within 3 working days
Price Each (In a Pack of 20)
SGD 0.391
(exc. GST)
SGD 0.418
(inc. GST)
units
Per unit
Per Pack*
20 - 80
SGD0.391
SGD7.82
100 - 980
SGD0.22
SGD4.40
1000 - 1980
SGD0.167
SGD3.34
2000 - 3980
SGD0.15
SGD3.00
4000 +
SGD0.138
SGD2.76
*price indicative
Packaging Options:
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