N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB Infineon IRFB5615PBF
- RS Stock No.:
- 124-9008
- Mfr. Part No.:
- IRFB5615PBF
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 124-9008
- Mfr. Part No.:
- IRFB5615PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Digital Audio MOSFET, Infineon
Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 35 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 39 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 144 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.83mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Transistor Material | Si |
| Series | HEXFET |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |