SCT2080KEC SiC N-Channel MOSFET, 40 A, 1200 V SCT2080KE, 3-Pin TO-247 ROHM

  • RS Stock No. 124-6851P
  • Mfr. Part No. SCT2080KEC
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

MOSFET Transistors, ROHM Semiconductor

Attribute Value
Channel Type N
Maximum Continuous Drain Current 40 A
Maximum Drain Source Voltage 1200 V
Maximum Drain Source Resistance 125 mΩ
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.6V
Maximum Gate Source Voltage -6 V, +22 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 262 W
Number of Elements per Chip 1
Width 15.9mm
Transistor Material SiC
Forward Diode Voltage 4.6V
Length 20.95mm
Maximum Operating Temperature +175 °C
Series SCT2080KE
Height 5.03mm
Typical Gate Charge @ Vgs 106 nC @ 18 V
50 In stock for delivery within 3 working days
Price Each (Supplied in a Tube)
SGD 29.86
(exc. GST)
SGD 31.95
(inc. GST)
Per unit
5 - 9
10 - 24
25 - 49
50 +
Packaging Options: