SiC N-Channel MOSFET, 40 A, 1200 V, 3-Pin TO-247 ROHM SCT2080KEC

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Discontinued product

Technical data sheets

MOSFET Transistors, ROHM Semiconductor

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	40 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	125 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	262 W
Maximum Gate Source Voltage	-6 V, +22 V
Number of Elements per Chip	1
Width	15.9mm
Length	20.95mm
Typical Gate Charge @ Vgs	106 nC @ 18 V
Maximum Operating Temperature	+175 °C
Transistor Material	SiC
Series	SCT2080KE
Forward Diode Voltage	4.6V
Height	5.03mm