SCT2080KEC SiC N-Channel MOSFET, 40 A, 1200 V SCT2080KE, 3-Pin TO-247 ROHM

  • RS Stock No. 124-6851
  • Mfr. Part No. SCT2080KEC
  • Manufacturer ROHM
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): PH
Product Details

MOSFET Transistors, ROHM Semiconductor

Attribute Value
Channel Type N
Maximum Continuous Drain Current 40 A
Maximum Drain Source Voltage 1200 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 125 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 1.6V
Maximum Power Dissipation 262 W
Maximum Gate Source Voltage -6 V, +22 V
Number of Elements per Chip 1
Transistor Material SiC
Forward Diode Voltage 4.6V
Length 20.95mm
Maximum Operating Temperature +175 °C
Height 5.03mm
Series SCT2080KE
Width 15.9mm
Typical Gate Charge @ Vgs 106 nC @ 18 V
Discontinued product