BUZ11_NR4941 N-Channel MOSFET, 30 A, 50 V, 3-Pin TO-220AB ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 A
Maximum Drain Source Voltage 50 V
Maximum Drain Source Resistance 40 mΩ
Minimum Gate Threshold Voltage 2.1V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 75 W
Width 4.83mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 10.67mm
Transistor Material Si
Maximum Operating Temperature +150 °C
Height 16.51mm
Temporarily out of stock - back order for despatch when stock is available
Price Each (In a Tube of 50)
SGD 1.329
(exc. GST)
SGD 1.422
(inc. GST)
units
Per unit
Per Tube*
50 - 50
SGD1.329
SGD66.45
100 - 200
SGD1.262
SGD63.10
250 - 450
SGD1.205
SGD60.25
500 - 950
SGD1.155
SGD57.75
1000 +
SGD1.111
SGD55.55
*price indicative
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