2N7000TA N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Advanced Power MOSFET, Fairchild Semiconductor

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Package Type TO-92
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 0.3V
Maximum Power Dissipation 400 mW
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 5.33mm
Width 4.19mm
Transistor Material Si
Length 5.2mm
Maximum Operating Temperature +150 °C
84000 In stock for delivery within 3 working days
Price Each (On a Reel of 2000)
SGD 0.105
(exc. GST)
SGD 0.112
(inc. GST)
units
Per unit
Per Reel*
2000 - 4000
SGD0.105
SGD210.00
6000 - 8000
SGD0.101
SGD202.00
10000 - 18000
SGD0.097
SGD194.00
20000 +
SGD0.094
SGD188.00
*price indicative
Related Products
Fairchild added the SuperFET® II high-voltage power MOSFET ...
Description:
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, ...
DN2625 is a low threshold depletion-mode (normally-on) transistor ...
Description:
DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive ...
This low threshold, enhancement-mode (normally-off) transistor utilizes a ...
Description:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient ...
This low threshold, enhancement-mode (normally-off) transistor utilizes a ...
Description:
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient ...