- RS Stock No.:
- 301-754
- Mfr. Part No.:
- IRF7530TRPBF
- Manufacturer:
- Infineon
- RS Stock No.:
- 301-754
- Mfr. Part No.:
- IRF7530TRPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Dual N-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 5.4 A |
Maximum Drain Source Voltage | 20 V |
Package Type | MSOP |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 30 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 1.2V |
Minimum Gate Threshold Voltage | 0.6V |
Maximum Power Dissipation | 1.3 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Width | 3mm |
Length | 3mm |
Number of Elements per Chip | 2 |
Typical Gate Charge @ Vgs | 18 nC @ 4.5 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Series | HEXFET |
Minimum Operating Temperature | -55 °C |
Height | 0.86mm |