IRF7530TRPBF Dual N-Channel MOSFET, 5.4 A, 20 V HEXFET, 8-Pin MSOP Infineon

  • RS Stock No. 301-754
  • Mfr. Part No. IRF7530TRPBF
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual N-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 5.4 A
Maximum Drain Source Voltage 20 V
Package Type MSOP
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 30 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.2V
Minimum Gate Threshold Voltage 0.6V
Maximum Power Dissipation 1.3 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -12 V, +12 V
Number of Elements per Chip 2
Transistor Material Si
Typical Gate Charge @ Vgs 18 nC @ 4.5 V
Series HEXFET
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Height 0.86mm
Width 3mm
Length 3mm
9445 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 1.13
(exc. GST)
SGD 1.21
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD1.13
SGD5.65
25 - 95
SGD0.872
SGD4.36
100 - 245
SGD0.788
SGD3.94
250 - 495
SGD0.778
SGD3.89
500 +
SGD0.766
SGD3.83
*price indicative
Packaging Options:
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