- RS Stock No.:
- 301-186
- Mfr. Part No.:
- IRF7507TRPBF
- Manufacturer:
- Infineon
2041 In stock for delivery within 4 working days
Added
Price Each
SGD0.98
(exc. GST)
SGD1.07
(inc. GST)
Units | Per unit |
1 - 2 | SGD0.98 |
3 - 4 | SGD0.94 |
5 + | SGD0.88 |
- RS Stock No.:
- 301-186
- Mfr. Part No.:
- IRF7507TRPBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 1.7 A, 2.4 A |
Maximum Drain Source Voltage | 20 V |
Series | HEXFET |
Package Type | MSOP |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 140 mΩ, 270 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 0.7V |
Minimum Gate Threshold Voltage | 0.7V |
Maximum Power Dissipation | 1.25 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -12 V, +12 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 3mm |
Typical Gate Charge @ Vgs | 5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V |
Number of Elements per Chip | 2 |
Length | 3mm |
Minimum Operating Temperature | -55 °C |
Height | 0.86mm |