N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P
- RS Stock No.:
- 194-350
- Mfr. Part No.:
- IXFN60N80P
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 27/05/2024, delivery within 4 working days from despatch date
Added
Price Each
SGD63.58
(exc. GST)
SGD69.30
(inc. GST)
| Units | Per unit |
| 1 - 9 | SGD63.58 |
| 10 - 49 | SGD62.26 |
| 50 - 99 | SGD60.39 |
| 100 - 249 | SGD58.59 |
| 250 + | SGD56.82 |
- RS Stock No.:
- 194-350
- Mfr. Part No.:
- IXFN60N80P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 53 A |
| Maximum Drain Source Voltage | 800 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 250 nC @ 10 V |
| Width | 25.42mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 38.23mm |
| Height | 9.6mm |
| Minimum Operating Temperature | -55 °C |