- RS Stock No.:
- 194-029
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
51 In stock for delivery within 4 working days
Added
Price Each
SGD55.49
(exc. GST)
SGD60.48
(inc. GST)
Units | Per unit |
1 - 4 | SGD55.49 |
5 + | SGD53.83 |
- RS Stock No.:
- 194-029
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 66 A |
Maximum Drain Source Voltage | 500 V |
Package Type | SOT-227B |
Series | HiperFET, Polar |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 65 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 700 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 195 nC @ 10 V |
Length | 38.2mm |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Width | 25.07mm |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |