Infineon IKW25N120T2FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 897-7403
- Mfr. Part No.:
- IKW25N120T2FKSA1
- Manufacturer:
- Infineon
90 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 2)
SGD9.065
(exc. GST)
SGD9.881
(inc. GST)
| Units | Per unit | Per Pack* |
| 2 - 8 | SGD9.065 | SGD18.13 |
| 10 - 38 | SGD8.875 | SGD17.75 |
| 40 - 98 | SGD8.69 | SGD17.38 |
| 100 - 198 | SGD8.51 | SGD17.02 |
| 200 + | SGD8.33 | SGD16.66 |
| *price indicative | ||
- RS Stock No.:
- 897-7403
- Mfr. Part No.:
- IKW25N120T2FKSA1
- Manufacturer:
- Infineon
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 50 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 349 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.13 x 5.21 x 21.1mm |
| Energy Rating | 4.3mJ |
| Gate Capacitance | 1600pF |
| Minimum Operating Temperature | -40 °C |
| Maximum Operating Temperature | +175 °C |