Toshiba GT40WR21,Q(O IGBT, 40 A 1800 V, 3-Pin TO-3P

  • RS Stock No. 891-2746
  • Mfr. Part No. GT40WR21,Q(O
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 40 A
Maximum Collector Emitter Voltage 1800 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 375 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 0.55µs
Transistor Configuration Single
Length 15.5mm
Width 4.5mm
Height 20mm
Dimensions 15.5 x 4.5 x 20mm
Gate Capacitance 4500pF
Maximum Operating Temperature 175 °C
29 Within 3 working day(s) (Global stock)
48 Within 3 working day(s) (Global stock)
Price Each
SGD 5.07
(exc. GST)
SGD 5.42
(inc. GST)
units
Per unit
1 - 19
SGD5.07
20 - 49
SGD4.44
50 - 99
SGD4.09
100 - 249
SGD4.04
250 +
SGD4.00
Packaging Options:
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Fuji Electric has been developing IGBT modules designed ...
Description:
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT ...
ROHM's IGBT products will contribute to energy saving ...
Description:
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. Low Collector - Emitter Saturation VoltageLow Switching LossShort Circuit Withstand Time 5usBuilt in Very Fast & Soft Recovery FRD (RFN ...
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide ...
Description:
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and ...