Infineon SGP02N120XKSA1 IGBT, 2 A 1200 V, 3-Pin TO-220, Through Hole
- RS Stock No.:
- 823-5582
- Mfr. Part No.:
- SGP02N120XKSA1
- Manufacturer:
- Infineon
Discontinued product
Alternative
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- RS Stock No.:
- 823-5582
- Mfr. Part No.:
- SGP02N120XKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MY
Product Details
Infineon Discrete IGBT Transistors
Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 2 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 62 W |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 8.5 x 4.4 x 9.25mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |