Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS

  • RS Stock No. 796-5046
  • Mfr. Part No. GT15J341
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 15 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Maximum Power Dissipation 30 W
Package Type TO-220SIS
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 100kHz
Transistor Configuration Single
Length 10mm
Width 4.5mm
Height 15mm
Dimensions 10 x 4.5 x 15mm
Maximum Operating Temperature +150 °C
135 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
SGD 3.902
(exc. GST)
SGD 4.175
(inc. GST)
units
Per unit
Per Pack*
5 - 20
SGD3.902
SGD19.51
25 - 95
SGD3.348
SGD16.74
100 - 245
SGD2.926
SGD14.63
250 - 495
SGD1.954
SGD9.77
500 +
SGD1.728
SGD8.64
*price indicative
Packaging Options: