Toshiba GT30J322(Q) IGBT, 30 A 600 V, 3-Pin TO-3PNIS, Through Hole
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
3 In stock for delivery within 4 working days
Added
Price Each
SGD5.51
(exc. GST)
SGD6.01
(inc. GST)
| Units | Per unit |
| 1 - 19 | SGD5.51 |
| 20 - 49 | SGD5.41 |
| 50 - 99 | SGD5.31 |
| 100 - 499 | SGD5.21 |
| 500 + | SGD4.29 |
- RS Stock No.:
- 601-2807
- Mfr. Part No.:
- GT30J322(Q)
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-3PNIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.8 x 5 x 21mm |
| Maximum Operating Temperature | +150 °C |