onsemi NXH450B100H4Q2F2PG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins)
- RS Stock No.:
- 245-6985
- Mfr. Part No.:
- NXH450B100H4Q2F2PG
- Manufacturer:
- onsemi
36 In stock for delivery within 4 working days
Added
Price Each (In a Tray of 36)
SGD327.717
(exc. GST)
SGD357.212
(inc. GST)
| Units | Per unit | Per Tray* |
| 36 - 36 | SGD327.717 | SGD11,797.812 |
| 72 - 72 | SGD327.192 | SGD11,778.912 |
| 108 + | SGD326.667 | SGD11,760.012 |
| *price indicative | ||
- RS Stock No.:
- 245-6985
- Mfr. Part No.:
- NXH450B100H4Q2F2PG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 101 A |
| Maximum Collector Emitter Voltage | 1000 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 2 |
| Maximum Power Dissipation | 79 W |
| Package Type | Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins) |