onsemi NXH100B120H3Q0PG IGBT Module, 61 A 1200 V Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins
- RS Stock No.:
- 245-6961
- Mfr. Part No.:
- NXH100B120H3Q0PG
- Manufacturer:
- onsemi
Temporarily out of stock - back order for despatch 03/03/2025, delivery within 4 working days from despatch date
Added
Price Each (In a Tray of 24)
SGD120.216
(exc. GST)
SGD131.035
(inc. GST)
| Units | Per unit | Per Tray* |
| 24 - 24 | SGD120.216 | SGD2,885.184 |
| 48 - 48 | SGD119.996 | SGD2,879.904 |
| 72 + | SGD119.776 | SGD2,874.624 |
| *price indicative | ||
- RS Stock No.:
- 245-6961
- Mfr. Part No.:
- NXH100B120H3Q0PG
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
The ON Semiconductor Dual Boost Power Module is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
1200 V Ultra Field Stop IGBTs
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM
Low Reverse Recovery and Fast Switching SiC Diodes
1600 V Bypass and Anti parallel Diodes
Low Inductive Layout
Solderable Pins or Press Fit Pins
Thermistor options with Pre applied thermal interface Material and without pre applied TIM
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 61 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 2 |
| Maximum Power Dissipation | 186 W |
| Package Type | Case 180BF (Pb-Free and Halide-Free) Press-Fit Pins |