DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.:: 182-6868
Mfr. Part No.:: DGTD120T25S1PT
Manufacturer:: DiodesZetex

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

300 In stock for delivery within 4 working days

Added

Price Each (On a Reel of 30)

SGD9.232

(exc. GST)

SGD10.063

(inc. GST)

Units	Per unit	Per Reel*
30 - 60	SGD9.232	SGD276.96
90 - 120	SGD9.086	SGD272.58
150 - 270	SGD8.847	SGD265.41
300 - 570	SGD8.381	SGD251.43
600 +	SGD7.499	SGD224.97
*price indicative

RS Stock No.:: 182-6868
Mfr. Part No.:: DGTD120T25S1PT
Manufacturer:: DiodesZetex

Technical data sheets

Datasheet DGTD120T25S1PT

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

The DGTD120T25S1PT is produced using advanced Field Stop Trench IGBT Technology, which provides low VCE(sat), excellent quality and high-switching performance.

High Speed Switching & Low VCE(sat) Loss
VCE(sat) = 2.0V @ IC = 25A
High Input Impedance
trr = 100ns (typ) @ diF/dt = 500A/μs
Ultra-Soft, Fast Recovery Anti-parallel Diode
Ultra Narrowed VF Distribution Control
Positive Temperature Coefficient For Easy Parallelling
Maximum Junction Temperature 175°C
Lead-free finish
Halogen and Antimony Free. “Green” Device
Applications
Motor Drive
UPS
Welder
Solar Inverter
IH Cooker

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	50 A, 100 (Pulsed) A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	348 W
Package Type	TO-247
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Dimensions	16.26 x 5.31 x 21.46mm
Minimum Operating Temperature	-40 °C
Gate Capacitance	3942pF
Maximum Operating Temperature	+175 °C