- RS Stock No.:
- 168-8947
- Mfr. Part No.:
- STGWA40S120DF3
- Manufacturer:
- STMicroelectronics
Discontinued product
- RS Stock No.:
- 168-8947
- Mfr. Part No.:
- STGWA40S120DF3
- Manufacturer:
- STMicroelectronics
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 468 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.9 x 5.1 x 21.1mm |
Minimum Operating Temperature | -55 °C |
Gate Capacitance | 2475pF |
Energy Rating | 8.5mJ |
Maximum Operating Temperature | +175 °C |