Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P

  • RS Stock No. 168-7766
  • Mfr. Part No. GT30J121
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes, Toshiba

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 170 W
Package Type TO-3P
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 15.9mm
Width 4.8mm
Height 20mm
Dimensions 15.9 x 4.8 x 20mm
Maximum Operating Temperature +150 °C
100 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
SGD 7.265
(exc. GST)
SGD 7.774
(inc. GST)
units
Per unit
Per Tube*
50 +
SGD7.265
SGD363.25
*price indicative
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