Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS
- RS Stock No. 168-7763
- Mfr. Part No. GT15J341
- Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
COO (Country of Origin): JP
Product Details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
| Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 15 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±25V |
| Maximum Power Dissipation | 30 W |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 100kHz |
| Transistor Configuration | Single |
| Length | 10mm |
| Width | 4.5mm |
| Height | 15mm |
| Dimensions | 10 x 4.5 x 15mm |
| Maximum Operating Temperature | +150 °C |
150 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
SGD
3.186
(exc. GST)
SGD
3.409
(inc. GST)
units
Per unit
Per Tube*
50 +
SGD3.186
SGD159.30
*price indicative
