- RS Stock No.:
- 168-4411
- Mfr. Part No.:
- IXGT30N120B3D1
- Manufacturer:
- IXYS
Temporarily out of stock - back order for despatch 30/10/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Tube of 30)
SGD14.957
(exc. GST)
SGD16.303
(inc. GST)
Units | Per unit | Per Tube* |
30 + | SGD14.957 | SGD448.71 |
*price indicative |
- RS Stock No.:
- 168-4411
- Mfr. Part No.:
- IXGT30N120B3D1
- Manufacturer:
- IXYS
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1200 V |
Package Type | TO-268 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.05 x 14 x 5.1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |