onsemi HGTG18N120BND IGBT, 54 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 145-4482
- Mfr. Part No.:
- HGTG18N120BND
- Manufacturer:
- onsemi
Discontinued product
- RS Stock No.:
- 145-4482
- Mfr. Part No.:
- HGTG18N120BND
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 54 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 390 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.87 x 4.82 x 20.82mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |