IXYS FII30-06D Dual IGBT, 30 A 600 V, 5-Pin ISOPLUS-I4-PAC

  • RS Stock No. 194-849
  • Mfr. Part No. FII30-06D
  • Manufacturer IXYS
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 30 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Number of Transistors 2
Package Type ISOPLUS-I4-PAC
Mounting Type Through Hole
Channel Type N
Pin Count 5
Transistor Configuration Single
Length 19.91mm
Width 5.03mm
Height 20.88mm
Dimensions 19.91 x 5.03 x 20.88mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Temporarily out of stock - back order for despatch 27/07/2020, delivery within 3 working days from despatch date
Price Each
SGD 14.29
(exc. GST)
SGD 15.29
(inc. GST)
units
Per unit
1 - 9
SGD14.29
10 - 49
SGD14.28
50 - 99
SGD12.00
100 - 249
SGD11.99
250 +
SGD11.98
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