Toshiba GT60J323(Q) IGBT, 60 A 600 V, 3-Pin TO-3PLH

  • RS Stock No. 184-521
  • Mfr. Part No. GT60J323(Q)
  • Manufacturer Toshiba
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): JP
Product Details

IGBT Discretes & Modules, Toshiba

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±25V
Package Type TO-3PLH
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 20.5mm
Width 5.2mm
Height 26mm
Dimensions 20.5 x 5.2 x 26mm
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
12 Within 3 working day(s) (Global stock)
5 Within 3 working day(s) (Global stock)
Price Each
SGD 9.33
(exc. GST)
SGD 9.98
(inc. GST)
Per unit
1 - 19
20 - 49
50 - 99
100 +
Packaging Options: