Fuji Electric 2MBi200U4H-120-50, M249 , N-Channel Series IGBT Module, 200 A max, 1200 V, Panel Mount
- RS Stock No.:
- 716-5567
- Mfr. Part No.:
- 2MBi200U4H-120-50
- Manufacturer:
- Fuji Electric
Discontinued product
- RS Stock No.:
- 716-5567
- Mfr. Part No.:
- 2MBi200U4H-120-50
- Manufacturer:
- Fuji Electric
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 200 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 1.04 kW |
| Package Type | M249 |
| Configuration | Series |
| Mounting Type | Panel Mount |
| Channel Type | N |
| Pin Count | 7 |
| Transistor Configuration | Series |
| Dimensions | 108 x 62 x 30mm |
| Maximum Operating Temperature | +150 °C |