Cypress Semiconductor, FM22LD16-55-BG

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition.

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 256K x 16 bit
Interface Type Parallel
Data Bus Width 16bit
Maximum Random Access Time 55ns
Mounting Type Surface Mount
Package Type FBGA
Pin Count 48
Dimensions 6 x 8 x 0.93mm
Length 6mm
Maximum Operating Supply Voltage 3.6 V
Width 8mm
Height 0.93mm
Maximum Operating Temperature +85 °C
Number of Words 256K
Number of Bits per Word 16bit
Minimum Operating Supply Voltage 2.7 V
Minimum Operating Temperature -40 °C
10 In stock for delivery within 4 working days
Price Each
SGD 62.92
(exc. GST)
SGD 67.32
(inc. GST)
units
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SGD62.92
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SGD56.94
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