- RS Stock No.:
- 194-9054
- Mfr. Part No.:
- FM22LD16-55-BG
- Manufacturer:
- Infineon
- RS Stock No.:
- 194-9054
- Mfr. Part No.:
- FM22LD16-55-BG
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22LD16 ideal for nonvolatile memory applications requiring frequent or rapid writes. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against an inadvertent access and data corruption under this condition.
Specifications
Attribute | Value |
---|---|
Memory Size | 4Mbit |
Organisation | 256K x 16 bit |
Interface Type | Parallel |
Data Bus Width | 16bit |
Maximum Random Access Time | 55ns |
Mounting Type | Surface Mount |
Package Type | FBGA |
Pin Count | 48 |
Dimensions | 6 x 8 x 0.93mm |
Maximum Operating Supply Voltage | 3.6 V |
Maximum Operating Temperature | +85 °C |
Number of Bits per Word | 16bit |
Minimum Operating Supply Voltage | 2.7 V |
Number of Words | 256K |
Minimum Operating Temperature | -40 °C |