Cypress Semiconductor, CY15B004Q-SXE

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B004Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance. The CY15B004Q is capable of supporting 1013 read/write cycles, or 10 million times more write cycles than EEPROM. These capabilities make the CY15B004Q ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

Specifications
Attribute Value
Memory Size 4kbit
Organisation 512K x 8 bit
Interface Type Serial-SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Maximum Operating Supply Voltage 3.6 V
Width 3.98mm
Height 1.47mm
Maximum Operating Temperature +125 °C
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
Number of Words 512K
Minimum Operating Supply Voltage 3 V
194 In stock for delivery within 4 working days
Price Each (In a Tube of 97)
SGD 2.643
(exc. GST)
SGD 2.828
(inc. GST)
units
Per unit
Per Tube*
97 - 97
SGD2.643
SGD256.371
194 - 194
SGD2.456
SGD238.232
291 - 485
SGD2.442
SGD236.874
582 - 970
SGD2.387
SGD231.539
1067 +
SGD2.346
SGD227.562
*price indicative
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