Cypress Semiconductor, CY15V104QI-20LPXI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

Low power, 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.Unlike serial flash and EEPROM, performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. Product offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement.

Attribute Value
Memory Size 4Mbit
Organisation 512K x 8 bit
Interface Type Serial-SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type GQFN
Pin Count 8
Dimensions 3.28 x 3.33 x 0.5mm
Length 3.28mm
Maximum Operating Supply Voltage 1.89 V
Width 3.33mm
Height 0.5mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 1.71 V
Minimum Operating Temperature -40 °C
Number of Words 512K
Temporarily out of stock - back order for despatch 13/07/2020, delivery within 3 working days from despatch date
Price Each
SGD 34.28
(exc. GST)
SGD 36.68
(inc. GST)
Per unit
1 - 9
10 - 24
25 - 49
50 - 99
100 +
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