Cypress Semiconductor, CY15B104QN-20LPXI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

Low power, 4-Mbit nonvolatilememory employing an advanced ferroelectric process. A ferro-electric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities,overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. Capable of supporting 1015 read/write cycles, or 1000 million times morewrite cycles than EEPROM. Ideal for nonvolatile memory applications, requiring frequent or rapid writes. Provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. Uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 512K x 8 bit
Interface Type Serial-SPI
Data Bus Width 8bit
Maximum Random Access Time 450 (Minimum)µs
Mounting Type Surface Mount
Package Type GQFN
Pin Count 8
Dimensions 3.28 x 3.33 x 0.5mm
Length 3.28mm
Width 3.33mm
Maximum Operating Supply Voltage 3.6 V
Height 0.5mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 1.8 V
Minimum Operating Temperature -40 °C
Number of Words 512K
10 In stock for delivery within 4 working days
Price Each
SGD 34.47
(exc. GST)
SGD 36.88
(inc. GST)
units
Per unit
1 - 9
SGD34.47
10 - 24
SGD32.80
25 - 49
SGD32.55
50 - 99
SGD31.99
100 +
SGD29.19
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