Cypress Semiconductor, FM25L16B-G
- RS Stock No. 188-5416
- Mfr. Part No. FM25L16B-G
- Manufacturer Cypress Semiconductor
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
| Attribute | Value |
|---|---|
| Memory Size | 16kbit |
| Organisation | 2k x 8 bit |
| Interface Type | SPI |
| Data Bus Width | 8bit |
| Mounting Type | Surface Mount |
| Package Type | SOIC |
| Pin Count | 8 |
| Dimensions | 4.97 x 3.98 x 1.48mm |
| Length | 4.97mm |
| Maximum Operating Supply Voltage | 3.6 V |
| Width | 3.98mm |
| Height | 1.48mm |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Supply Voltage | 2.7 V |
| Minimum Operating Temperature | -40 °C |
| Automotive Standard | AEC-Q100 |
| Number of Words | 2k |
| Number of Bits per Word | 8bit |
