Cypress Semiconductor, CY15B104Q-SXI

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 4Mbit
Organisation 512k x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 5.33 x 5.33 x 1.78mm
Length 5.33mm
Maximum Operating Supply Voltage 3.6 V
Width 5.33mm
Height 1.78mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Minimum Operating Supply Voltage 2 V
Number of Bits per Word 8bit
Number of Words 512k
Temporarily out of stock - back order for despatch 23/10/2020, delivery within 4 working days from despatch date
Price Each (In a Tube of 94)
SGD 38.892
(exc. GST)
SGD 41.614
(inc. GST)
units
Per unit
Per Tube*
94 - 94
SGD38.892
SGD3,655.848
188 +
SGD34.019
SGD3,197.786
*price indicative
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