Cypress Semiconductor FM25V01A-G SPI FRAM Memory, 128kbit, 2 → 3.6 V 8-Pin SOIC

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 128kbit
Organisation 16K x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.6 V
Height 1.47mm
Maximum Operating Temperature +85 °C
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
Minimum Operating Supply Voltage 2 V
Number of Words 16K
824 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
SGD 8.42
(exc. GST)
SGD 9.01
(inc. GST)
units
Per unit
Per Pack*
2 - 8
SGD8.42
SGD16.84
10 - 18
SGD7.34
SGD14.68
20 - 98
SGD6.87
SGD13.74
100 - 498
SGD6.405
SGD12.81
500 +
SGD5.955
SGD11.91
*price indicative
Packaging Options:
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