Cypress Semiconductor FM24V05-G Serial-I2C FRAM Memory, 512kbit, 2 → 3.6 V 8-Pin SOIC

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 512kbit
Organisation 64K x 8 bit
Interface Type Serial-I2C
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.47mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.6 V
Height 1.47mm
Maximum Operating Temperature +85 °C
Number of Bits per Word 8bit
Minimum Operating Temperature -40 °C
Number of Words 64K
Minimum Operating Supply Voltage 2 V
232 In stock for delivery within 3 working days
Price Each
SGD 19.58
(exc. GST)
SGD 20.95
(inc. GST)
units
Per unit
1 - 9
SGD19.58
10 - 24
SGD17.52
25 - 99
SGD17.03
100 - 499
SGD15.00
500 +
SGD14.08
Packaging Options:
Related Products
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...
Integrated devices that includes the most commonly needed ...
Description:
Integrated devices that includes the most commonly needed functions for processor-based systems. Serial Nonvolatile FRAM MemoryReal-time Clock (RTC)Low Voltage ResetWatchdog TimerEarly Power-Fail Warning/NMITwo 16-bit Event CountersSerial Number with Write-lock for SecurityBattery-backed switchoverEvent Counter ...
64-Kbit ferro electric random access memory (F-RAM) logically ...
Description:
64-Kbit ferro electric random access memory (F-RAM) logically organized as 8K ´ 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table)No Delay™ writes Advanced high-reliability ferro electric processFast 2-wire Serial interface (I2C)Up to ...
16-Kbit ferroelectric random access memory (F-RAM) logically organized ...
Description:
16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K ´ 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See Data Retention and Endurance on page 10)NoDelay™ writes Advanced high-reliability ferroelectric processFast 2-wire Serial interface (I2C)Up to 1-MHz frequency ...