Cypress Semiconductor FM24CL64B-DG Serial-I2C FRAM Memory, 64kbit, 2.7 → 3.65 V 8-Pin DFN
- RS Stock No. 124-2982
- Mfr. Part No. FM24CL64B-DG
- Manufacturer Cypress Semiconductor
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
| Attribute | Value |
|---|---|
| Memory Size | 64kbit |
| Organisation | 8K x 8 bit |
| Interface Type | Serial-I2C |
| Data Bus Width | 8bit |
| Mounting Type | Surface Mount |
| Package Type | DFN |
| Pin Count | 8 |
| Dimensions | 4 x 4.5 x 0.7mm |
| Length | 4mm |
| Maximum Operating Supply Voltage | 3.65 V |
| Width | 4.5mm |
| Height | 0.7mm |
| Maximum Operating Temperature | +85 °C |
| Minimum Operating Supply Voltage | 2.7 V |
| Number of Bits per Word | 8bit |
| Minimum Operating Temperature | -40 °C |
| Number of Words | 8K |
