NXP, PDTC124XU,115 NPN Digital Transistor, 100 mA 50 V 22 kΩ, Ratio Of 0.47, 3-Pin UMT

  • RS Stock No. 518-3015
  • Mfr. Part No. PDTC124XU,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Dual Resistor Digital NPN Transistors, Nexperia

Digital Transistors, Nexperia

Resistor-equipped bipolar transistors, also known as “Digital Transistors” or “Bias Resistor Transistors”, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.

Specifications
Attribute Value
Transistor Type NPN
Number of Elements per Chip 1
Maximum Continuous Collector Current 100 mA
Maximum Collector Emitter Voltage 50 V
Typical Input Resistor 22 kΩ
Mounting Type Surface Mount
Package Type UMT
Pin Count 3
Minimum DC Current Gain 80
Transistor Configuration Single
Maximum Collector Emitter Saturation Voltage 0.15 V
Maximum Emitter Base Voltage 7 V
Typical Resistor Ratio 0.47
Height 1mm
Maximum Operating Temperature +150 °C
Dimensions 2.2 x 1.35 x 1mm
Minimum Operating Temperature -65 °C
Length 2.2mm
Width 1.35mm
61100 In stock for delivery within 3 working days
Price Each (In a Pack of 50)
SGD 0.24
(exc. GST)
SGD 0.26
(inc. GST)
units
Per unit
Per Pack*
50 - 50
SGD0.24
SGD12.00
100 - 200
SGD0.236
SGD11.80
250 - 450
SGD0.232
SGD11.60
500 - 950
SGD0.227
SGD11.35
1000 +
SGD0.221
SGD11.05
*price indicative
Packaging Options:
Related Products
Bipolar Junction Transistors (BJT) broad range provides complete ...
Description:
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
This N-Channel MOSFET is produced using an advanced ...
Description:
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 5.8mΩ at VGS = 10V, ID = 13.5AMax rDS(on) = ...
N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω. ...
Description:
N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω.
Typical applications are DC-DC converters and power management ...
Description:
Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such ...