ON Semiconductor, SBC846BPDW1T1G

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.

Pb-Free Package is Available
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

Specifications
Attribute Value
Transistor Type NPN + PNP
Number of Elements per Chip 2
Maximum Continuous Collector Current 100 mA
Maximum Collector Emitter Voltage 65 V
Mounting Type Surface Mount
Package Type SOT-363
Pin Count 6
Minimum DC Current Gain 200
Maximum Power Dissipation 380 mW
Maximum Collector Emitter Saturation Voltage 0.6 V
Maximum Emitter Base Voltage 6 V
Configuration Dual
Width 1.35mm
Maximum Base Emitter Saturation Voltage 0.9 (Typ.) V
Dimensions 2.2 x 1.35 x 0.9mm
Length 2.2mm
Maximum Operating Temperature +150 °C
Automotive Standard AEC-Q101
Height 0.9mm
Minimum Operating Temperature -55 °C
5925 In stock for delivery within 3 working days
Price Each (In a Pack of 25)
SGD 0.469
(exc. GST)
SGD 0.502
(inc. GST)
units
Per unit
Per Pack*
25 - 25
SGD0.469
SGD11.725
50 - 75
SGD0.46
SGD11.50
100 - 225
SGD0.202
SGD5.05
250 - 975
SGD0.198
SGD4.95
1000 +
SGD0.156
SGD3.90
*price indicative
Packaging Options: