ON Semiconductor, FDS8958A

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

These dual N- and P-Channel enhancement mode power field effect transistors are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Q1: N-Channel
7.0 A, 30 V
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 40 mΩ @ VGS = 4.5 V
Q2: P-Channel
-5 A,-30 V
RDS(ON) = 52 mΩ @ VGS = -10 V
RDS(ON) = 80 mΩ @ VGS = -4.5 V
Fast switching speed
High power and handling capability in a widely used surface mount package
Applications
This product is general usage and suitable for many different applications.

Specifications
Attribute Value
Number of Elements per Chip 2
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Maximum Power Dissipation 1.6 (Single) W, 2 (Dual) W
Dimensions 4.9 x 3.9 x 1.58mm
Maximum Operating Temperature +150 °C
Width 3.9mm
Minimum Operating Temperature -55 °C
Height 1.58mm
Length 4.9mm
7390 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
SGD 1.166
(exc. GST)
SGD 1.248
(inc. GST)
units
Per unit
Per Pack*
10 - 40
SGD1.166
SGD11.66
50 - 90
SGD1.144
SGD11.44
100 - 240
SGD0.753
SGD7.53
250 - 990
SGD0.737
SGD7.37
1000 +
SGD0.606
SGD6.06
*price indicative
Packaging Options: