onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

This image is representative of the product range

105 In stock for delivery within 4 working days

Added

Price Each (In a Pack of 15)

SGD1.029

(exc. GST)

SGD1.122

(inc. GST)

Units	Per unit	Per Pack*
15 - 15	SGD1.029	SGD15.435
30 - 60	SGD1.008	SGD15.12
75 - 135	SGD0.977	SGD14.655
150 - 285	SGD0.947	SGD14.205
300 +	SGD0.919	SGD13.785
*price indicative

RS Stock No.:: 790-5315
Mfr. Part No.:: MJD112-1G
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	IPAK (TO-251)
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Minimum Operating Temperature	-65 °C
Maximum Operating Temperature	+150 °C
Length	6.73mm
Height	6.35mm
Width	2.38mm
Dimensions	6.73 x 2.38 x 6.35mm
Maximum Power Dissipation	20 W