Toshiba 2SD2719(TE85L,F) NPN Darlington Transistor, 800 mA 60 V HFE:2000, 3-Pin TSM

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Discontinued product

Technical data sheets

Bipolar Transistors, Toshiba

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	800 mA
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	8 V
Package Type	TSM
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	2000
Maximum Base Emitter Saturation Voltage	2 V
Maximum Collector Base Voltage	50 V
Maximum Collector Emitter Saturation Voltage	1.5 V
Maximum Collector Cut-off Current	0.01mA
Maximum Operating Temperature	+150 °C
Dimensions	2.9 x 1.6 x 0.7mm
Width	1.6mm
Height	0.7mm
Maximum Power Dissipation	800 mW
Length	2.9mm