onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

RS Stock No.:: 100-7565
Mfr. Part No.:: MJ11016G
Manufacturer:: onsemi

onsemi MJ11016G NPN Darlington Transistor, 30 A 120 V HFE:200, 3-Pin TO-204

This image is representative of the product range

600 In stock for delivery within 4 working days

Added

Price Each (In a Tray of 100)

SGD6.218

(exc. GST)

SGD6.778

(inc. GST)

Units	Per unit	Per Tray*
100 - 100	SGD6.218	SGD621.80
200 - 400	SGD6.031	SGD603.10
500 +	SGD5.85	SGD585.00
*price indicative

RS Stock No.:: 100-7565
Mfr. Part No.:: MJ11016G
Manufacturer:: onsemi

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CZ

Product Details

NPN Darlington Transistors, ON Semiconductor

Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

The ON Semiconductor MJ11016G is a 30A, 120V NPN Darlington bipolar power transistor. It is designed to be used as an output device for general purpose amplifier applications.
The MJ11016G comes in a Pb-free TO-204AA (TO-3) though hole package.

• High DC Current Gain
• Monolithic Construction
• Built-in Base Emitter Shunt Resistor
• Junction Temperature: to +200°C
• NPN Polarity

Versions Available:
463-000 - pack of 2
100-7565 - tray of 100

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	120 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204
Mounting Type	Through Hole
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	120 V
Maximum Collector Emitter Saturation Voltage	4 V
Dimensions	39.37 x 26.67 x 8.51mm
Width	26.67mm
Height	8.51mm
Length	39.37mm
Maximum Operating Temperature	+200 °C
Minimum Operating Temperature	-55 °C