Diodes Inc LMN200B02-7 Dual PNP BJT + N-MOSFET, 200 mA, 50 V, 6-Pin SOT-363

  • RS Stock No. 823-1435
  • Mfr. Part No. LMN200B02-7
  • Manufacturer DiodesZetex
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Bipolar PNP & MOSFET Transistor, Diodes Inc

Transistors, Diodes Inc

Specifications
Attribute Value
Transistor Type NPN + PNP
Maximum DC Collector Current 200 mA
Maximum Collector Emitter Voltage 50 V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 250
Transistor Configuration N+P Loadswitch
Maximum Collector Base Voltage -50 V
Maximum Emitter Base Voltage -5 V
Maximum Operating Frequency 200 MHz
Pin Count 6
Number of Elements per Chip 2
Height 1mm
Length 2.2mm
Maximum Collector Emitter Saturation Voltage -0.3 V
Maximum Operating Temperature +150 °C
Maximum Base Emitter Saturation Voltage -5.5 V
Dimensions 2.2 x 1.35 x 1mm
Width 1.35mm
Minimum Operating Temperature -55 °C
2900 In stock for delivery within 4 working days
Price Each (In a Pack of 25)
SGD 0.502
(exc. GST)
SGD 0.537
(inc. GST)
units
Per unit
Per Pack*
25 - 25
SGD0.502
SGD12.55
50 - 225
SGD0.477
SGD11.925
250 - 475
SGD0.472
SGD11.80
500 - 975
SGD0.467
SGD11.675
1000 +
SGD0.463
SGD11.575
*price indicative
Packaging Options: