NXP PBSS4350SS,115 Dual NPN Transistor, 2.7 A, 50 V, 8-Pin SOT-96

  • RS Stock No. 816-2705
  • Mfr. Part No. PBSS4350SS,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type NPN
Maximum DC Collector Current 2.7 A
Maximum Collector Emitter Voltage 50 V
Package Type SOT-96
Mounting Type Surface Mount
Maximum Power Dissipation 2 W
Minimum DC Current Gain 300
Transistor Configuration Isolated
Maximum Collector Base Voltage 50 V
Maximum Emitter Base Voltage 5 V
Maximum Operating Frequency 1 MHz
Pin Count 8
Number of Elements per Chip 2
Maximum Collector Emitter Saturation Voltage 340 mV
Width 4mm
Maximum Operating Temperature +150 °C
Height 1.75mm
Dimensions 5 x 4 x 1.75mm
Maximum Base Emitter Saturation Voltage 1.2 V
Minimum Operating Temperature -65 °C
Length 5mm
500 In stock for delivery within 4 working days
Price Each (In a Pack of 20)
SGD 0.754
(exc. GST)
SGD 0.807
(inc. GST)
units
Per unit
Per Pack*
20 - 20
SGD0.754
SGD15.08
40 - 80
SGD0.696
SGD13.92
100 - 180
SGD0.647
SGD12.94
200 - 380
SGD0.603
SGD12.06
400 +
SGD0.566
SGD11.32
*price indicative
Packaging Options:
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