NXP PBSS5330X,115 PNP Transistor, 3 A, 30 V, 4-Pin UPAK

  • RS Stock No. 518-1946
  • Mfr. Part No. PBSS5330X,115
  • Manufacturer Nexperia
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Specifications
Attribute Value
Transistor Type PNP
Maximum DC Collector Current 3 A
Maximum Collector Emitter Voltage 30 V
Package Type UPAK
Mounting Type Surface Mount
Maximum Power Dissipation 1.6 W
Minimum DC Current Gain 100
Transistor Configuration Single
Maximum Collector Base Voltage 30 V
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 100 MHz
Pin Count 4
Number of Elements per Chip 1
Height 1.6mm
Maximum Operating Temperature +150 °C
Length 4.6mm
Dimensions 1.6 x 4.6 x 2.6mm
Width 2.6mm
Maximum Base Emitter Saturation Voltage 1.2 V
Minimum Operating Temperature -65 °C
Maximum Collector Emitter Saturation Voltage 0.32 V
370 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
SGD 0.408
(exc. GST)
SGD 0.437
(inc. GST)
units
Per unit
Per Pack*
10 - 10
SGD0.408
SGD4.08
20 - 40
SGD0.403
SGD4.03
50 - 90
SGD0.376
SGD3.76
100 - 190
SGD0.361
SGD3.61
200 +
SGD0.355
SGD3.55
*price indicative
Packaging Options:
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